University of Maryland Institute for Research in Electronics and Applied Physics
Institute for Research in Electronics and Applied Physics

Laboratory for Ion Beam Research and Applications

Books

  1. "Focused Ion Beams for Direct Writing", K. Edinger, in Direct Write Technologies for Rapid Prototyping, edited by A. Pique and D. Chrisey (Academic Press, San Diego, CA, 2002), p. 347-383.

  2. "Fabrication, Characterization and Post-Processing of the Cathodic Arc Derived Hydrogen-Free Tetrahedral Amorphous Carbon", A. Stanishevsky, in Handbook of Surfaces and Intefaces of Materials, Vol. 4, Chap. 5, edited by H. S. Nalwa (Academic Press, San Diego, CA, 2001), p. 282-334.

Publications in Refereed Journals

  1. "Simple Model for Dielectrophoretic Alignment of Gallium Nitride Nanowires," Abhishek Motayed, Maoqi He, Albert V. Davydov, John Melngailis, and S. N. Mohammad, J. Vac. Sci. Technol. 25, 120 (2007).

  2. "Diameter Dependent Transport Properties of Gallium Nitride Nanowire Field Effect Transistors," A. Motayed, M.Vaudin, A. V. Davydov, J. Melngailis, M. He, and S. N. Mohammad, Appl. Phys. Lett. 90, 043104 (2007).

  3. "365 nm Operation of n-Nanowire/p-Gallium Nitride Homojunction Light Emitting Diodes," Abhishek Motayed, Albert V. Davydov, Maoqi He, S. N. Mohammad, and John Melngailis, Appl. Phys. Lett. 90, 183120 (2007).

  4. "Maskless Fabrication of JFETs via Focused Ion Beams," Anthony J. DeMarco and John Melngailis, Solid State Electron. 48, 1833-1836 (2004).

  5. "Design and Fabrication of Schottky Diode, On-Chip RF Power Detector," Woochul Jeon, Todd M. Firestone, John C. Rodgers, and John Melngailis, Solid State Electron. 48, 2089-2093 (2004).

  6. "Dynamics of Ferrolectric Domains in Ferrolelastic Thin Films," V. Nagarajan, A. Roytburd, A. Stanishevsky, S. Prasertchoung, T. Zhao, L. Chen, J. Melngailis, O. Aucilello, and R. Ramesh, Nature Materials 2, 43-47, (2003).

  7. "Testing New Chemistries for Mask Repair with Focused Ion Beam Gas Assisted Etching," Andrei Stanishevsky, Klaus Edinger, Jon Orloff, John Melngailis, Diane Stewart, Alvina Williams, and Richard Clark, J. Vac. Sci. Technol. B 21, 3067 (2003).

  8. "Realizing Intrinsic Piezoresponse in Epitaxial Submicron Lead Zirconate Titanate Capacitors on SI," V. Nagarajan, A. Stanishevsky, L. Chen, T. Zhao, B.-T. Liu, J. Melngailis, A. L. Roytburd, R. Ramesh, Ju Finder, Z. Yu, R. Droopad, and K. Eisenbeiser, Appl. Phys. Lett. 81 (22), 4215-4217 (2002).

  9. "Rapid Imaging of Nanotubes on Insulating Substrates," T. Brintlinger, Yung-Fu Chen, T. Durkop, Enrique Cobas, M. S. Fuhrer, John D. Barry, and John Meilgailis, Appl. Phys. Lett. 81 (13), 2454-2456 (2002).

  10. Patterning of GaN by Ion Implantation-Dependent Etching," S. Schiestel, B. Molnar, C. A. Carosella, R. M. Stroud, D. Knies, and K. Edinger, Mater. Sci. Eng. B 82, 111 (2001).

  11. "B-C-N Coatings Prepared by Microwave Chemical Vapor Deposition," A. Stanishevsky, H. Li, A. Badzian, T. Badzian, W. Drawl, Yu. Khriachtchev, and E. McDaniel, Thin Solid Films 398-399, 270-274 (2001).

  12. "Patterning of Diamond and Amorphous Carbon Films Using Focused Ion Beams," A. Stanishevsky, Thin Solid Films 398-399 (2001) 560-564.
  13. "Direct Hysteresis Measurements of Single Nanosized Ferroelectric Capacitors Contacted with an Atomic Force Microscope," S. Tiedke, T. Schmitz, K. Prume, A. Roelofs, T. Schneller, U. Kall, R. Waser, C. S. Ganpule, V. Nagarajan, A. Stanishevsky, and R. Ramesh, Appl. Phys. Lett. 79, 3678 (2001).

  14. "Observation of Current Crowding near Fabricated Voids in Gold Lines," R. Yongsunthon, A. Stanishevsky, J. McCoy, and E. D. Williams, Appl. Phys. Lett. 78, 2661-2663 (2001).

  15. "Modeling of Focused Ion Beam Induced Surface Chemistry," K. Edinger and Th. Kraus, J. Vac. Sci. Technol. B 18, 3190 (2000).

  16. "Nanoscale Patterning of Self-Assembled Monolayers with Electrons," Golzhauser, W. Geyer, V. Stadler, W. Eck, M. Grunze, T. Weimann, P. Hinze, and K. Edinger, J. Vac. Sci. Technol. B 18, 3414 (2000).

  17. "Progress on Nanostructuring with Nanojet," J. Voigt, A. Iline, F. Shi, P. Hudeck, I. Rangelow, G. Mariotto, I. Shvets, P. Gunther, H. Loschner, and K. Edinger, J. Vac. Sci. Technol. B 18, 3525 (2000).

  18. "Direct Patterning of Gold Oxide Thin Films," F. Machalett, K. Edinger, J. Melngailis, M. Diegel, K. Steenbeck, and E. Steinbeiss, Appl. Phys A 71, 331 (2000).

  19. "Accurate Location and Marking of Grain Boundaries Using Focused Ion and Electron Beams," F. Machalett, K. Edinger, J. Melngailis, P. Seidel, and T. Venkatesan, Nucl. Instrum. Meth. Phys. Res. B 170, 474 (2000).

  20. "Focused-Ion-Beam Writing of Electrical Contacts into Platinum Oxide Films," F. Machalett, K. Edinger, L. Ye, and J. Melngailis, Appl. Phys. Lett. 76, 3445 (2000).

  21. "Pt and W Ohmic Contacts to p-6H-SiC by Focused Ion Beam Direct-Write Deposition," A. A. Iliadis, S. N. Andronesky, W. Wang, R. D. Vispute, A. Stanishevsky, J. H. Orloff, R. P. Sharma, T. Venkatesan, M. C. Wood, and K. A. Jones, J. Electron. Mater. 28, 136 (1999).

  22. "Gas Assisted Etching of Copper with Focused Ion Beams," K. Edinger, J. Vac. Sci. Technol. B 17, 3058 (1999).

  23. "Fabrication of High-Temperature Superconducting Josephson Junctions on Substrates Prepared by Focused Ion Beam System," I. Jin, C.-H. Chen, S. P. Pai, B. Ming, D. J. Kang, T. Venkatesan, F. Machalett, K. Edinger, J. Orloff, and J. Melngailis, IEEE Trans. Appl. Supercond. 9, 2894 (1999).

  24. "Experimental Observation of Mode Evolution in Angle-Mode Tapered Optical Fibers," J. Fielding, K. Edinger, and C. Davis, IEEE J. Lightwave Technol. 17, 1649 (1999).

  25. "A Study of Precursor Gases for Ion Beam Insulator Deposition," K. Edinger, J. Melngailis, and J. Orloff, J. Vac. Sci. Technol. B 16, 3311 (1998).

  26. "Use of Focused Ion Beam and Modeling to Optimize Submicron MOSFET Characteristics," C.-H. Shen, James Murugia, Neil Goldsman, Marty Peckerar (Fellow, IEEE), John Melngailis (Senior Member, IEEE), and Dimitri Antoniadis (Fellow, IEEE), IEEE Trans. Electron Devices 45, N2 (1998).

  27. "A Review of Ion Projection Lithography," J. Melngailis, A. A. Mondelli, Ivan L. Berry III, and R. Mohondro, J. Vac. Sci. Technol. B 16, 927 (1998).

  28. "Fabrication and Characterization of Buried Subchannel Implant n-Metal-Oxide-Semiconductor Transistors," W. Wang, D. McCarthy, D. Park, D. Ma, M. Peckerar, N. Goldsman, J. Melngailis, and I. L. Berry, J. Vac. Sci. Technol. B 16, 3812 (1998).

  29. "Ohmic Contacts to p-6H-SiC Using Focused Ion Beam Surface Modification and Pulsed Laser Epitaxial TiN Deposition," A. A. Iliadis, S. N. Andronescu, K. Edinger, J. Orloff, R. D. Vispute, R. P. Sharma, V. Talyansky, T. Venkatesan, M. C. Wood, and K. Jones, Appl. Phys. Lett. 73, 1 (1998).

  30. "Fabrication of Submicron Structures in CVD Diamond by Focused Ion Beam," A. Stanishevsky, J. Superhard Mater. 20, 4 (1998).

  31. "Solid Hydrogen at 342 Gpa: No Evidence for an Alkali Metal," C. Narayana, H. Luo, J. Orloff, and A. Ruoff, Nature 393, 46 (1998).

  32. "Focused Ion-Beam Patterning of Nanoscale Ferroelectric Capacitors," A. Stanishevsky, S. Aggarwal, J. Melngailis, R. Ramesh, and A. S. Prakash, J. Vac. Sci. Technol. B 16, 3899 (1998).

  33. "Combined Method of Focused Ion Beam Milling and Ion Implantation Techniques for the Fabrication of High Temperature Superconductor Josephson Junctions," C.-H. Chen, I. Jin, S. P. Pai, Z. W. Dong, R. P. Sharma, C. J. Lobb, T. Venkatesan, K. Edinger, J. Orloff, J. Melngailis, Z. Zhang, and W. K. Chu, J. Vac. Sci. Technol. B 16, 2898 (1998).

  34. "Fabrication of High-Temperature Superconducting Josephson Junctions on Substrates Patterned by Focused Ion Beam," C.-H. Chen, I. Jin, S. P. Pai, Z. W. Dong, C. J. Lobb, T. Venkatesan, K. Edinger, J. Orloff, and J. Melngailis, Appl. Phys. Lett. 73, 1730 (1998).

  35. "Analysis of Stencil Mask Distortion in Ion Projection Lithography," L. Didenko, J. Melngailis, H. Loschner, G. Stengl, A. Chalupka, and A. Shimkunas, Microelectron. Eng. 35, 443 (1997).

  36. "Fabrication of High Temperature Superconductor Josephson Junctions by Focused Ion Beam Milling," C.-H. Chen, Z. Trajanovic, Z. W. Dong, C. J. Lobb, T. Venkatesan, K. Edinger, J. Orloff, and J. Melngailis, J. Vac. Sci. Technol. B 15, 2379 (1997).

  37. "Focused Ion Beam Sputter Yield Changes as a Function of Scan Speed," D. Santamore, K. Edinger, J. Orloff, and J. Melngailis, J. Vac. Sci. Technol. B 15, 2346 (1997).

  38. "Development of a High Brightness Gas Field Ion Source," Klaus Edinger, Victor Yun, John Melngailis, Jon Orloff, and Gerald Magera, J. Vac. Sci. Technol. B 15, 2365 (1997).

  39. "Spherical Aberration Corrector Using Space Charge," L. C. Chao, J. Orloff, and Li Wang, J. Vac. Sci. Technol. B 15, 2732 (1997).

  40. "Programmable Aperture Plate for Maskless High-Throughput Nanolithography," I. L. Berry, A. A. Mondelli, J. Nichols, and J. Melngailis, J. Vac. Sci. Technol. B 15, 2382 (1997).

  41. "Corrosion of Gold by Alkane Thiols," K. Edinger, M. Grunze, and Ch. Wöll, Ber. Bunsenges. Phys. Chem. 101, 1811 (1997).

  42. "Fundamental Limits on Imaging Resolution in Focused Ion Beam Systems," J. Orloff, L. W. Swanson and M. Utlaut, J. Vac. Sci. Technol. B14, 3759 (1996).

  43. "Laser Assisted Focused-Ion-Beam-Induced Deposition of Copper," J. Funatsu, C. V. Thompson, J. Melngailis, and J. N. Walpole, J. Vac. Sci. Technol. B 14, 179 (1996).

  44. "High-Brightness Ion Source for Ion Projection Lithography," S. K. Guharay, W. Wang, V. G. Dudnikov, M. Reiser, J. Orloff, and J. Melngailis, J. Vac. Sci. Technol. B 14, 3907 (1996).

  45. "Modification of Intrinsically Conducting Polymers by Ion Implantation," S. Schiestel, P. Banniza, G. K. Wolf, and K. Edinger, Nucl. Instrum. Meth. Phys. Res. B 116, 164 (1996).

  46. "Monte-Carlo Simulation of Discrete Space Charge Effects in Space Charge Lenses," T. Tang, L. Wang, and J. Orloff, Optik 102, 141 (1995).

  47. "Study of H- Beams for Ion-Projection Lithography," C.-H. Chen, S. K. Guharay, M. Reiser, J. Riordan, J. Orloff, and J. Melngailis, J. Vac. Sci. Technol. B 13, 2597 (1995).

  48. "Principle of Operation and Carrier Distributions of AlGaAs/GaAs In-Plane-Gated Channels," M. A. Armstrong, S. Etchin, J. Melngailis, and D. A. Antoniadis, J. Appl. Phys. 78, 560 (1995).

  49. "Ion Beam Modification and Patterning of Organosilane Self-Assembled Monolayers," E. T. Ada, L. Hanley, S. Etchin, J. Melngailis, W. J. Dressick, M.-S. Chen, and J. M. Calvert, J. Vac. Sci. Technol. B 13, 2189 (1995).

  50. "Microstructure of Gold Grown by Ion-Induced Deposition," J. S. Ro, C. V. Thompson, and J. Melngailis, Thin Solid Films 258, 333 (1995).

  51. "Control of Temperature Gradients and Distortion of Ion Projection Lithography Masks," A. Birman, B. Levush, and J. Melngailis, J. Vac. Sci. Technol. B 13, 2584 (1995).

  52. "Modeling and Design of Space Charge Lenses/Aberration Correctors for Focused Ion Beam Systems," Tiantong Tang, Jon Orloff, and Li Wang, J. Vac. Sci. Technol. B 14, 80 (1996).

  53. "Limits on Imaging Resolution of Focused Ion Beam Systems," Jon Orloff, SPIE Proc. 2522, Charged Particle Optics 412 (1995).

  54. "Study of Space Charge Devices for Focused Ion Beam Systems," Li Wang, Jon Orloff, and Tiantong Tang, J. Vac. Sci. Technol. B 13, 2414 (1995).

  55. "A New Method for Calculating the Axial Potential Due to Space Charge in Electrostatic Optics," L. Wang, J. Orloff, D. Book, and T. Tang, J. Phys. D 28, 1791 (1995).

  56. "Mechanism of Ion Beam Induced Deposition of Gold," J. S. Ro, C. V. Thompson, and J. Melngailis, J. Vac. Sci. Technol. B 12, 73 (1994).

  57. "Novel Electrostatic Column for Ion Projection Lithography," A. Chalupka, G. Stengl, H. Buschbeck, G. Lammer, H. Vonach, R. Fischer, E. Hammel, H. Löschner, R. Nowak, P. Wolf, W. Finkelstein, R. W. Hill, I. L. Berry, L. R. Harriott, J. Melngailis, J. N. Randall, J. C. Wolfe, H. Stroh, H. Wollnik, A. A. Mondelli, J. J. Petillo, and K. Leung, J. Vac. Sci. Technol. B 12 (1994) 3513.

  58. "Focused Ion Beam Lithography," J. Melngailis, (review article), Nuclear Instrum. Methods in Phys. Res., B80/81, 1271 (1993).

  59. "High-Resolution Focused Ion Beams," invited review paper, J. Orloff, Rev. Sci. Instrum. 64 (1993) 1105.

  60. "Formation of Self-Assembled Monolayers of N-Alkanethiols on Gold: A Scanning Tunneling Microscopy Study on the Modification of Substrate Morphology," K. Edinger, A. Gölzhäuser, K. Demota, Ch. Wöll and M. Grunze, Langmuir 9, 4 (1993).
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